GaN Systems Director

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I am searching for a  GaN Device Development Director  for one of my esteemed clients based near Cambridge, UK.

Due to their continued success, they are looking to add a  GaN Device Development Director  to their team.

This person will be responsible for building technology platforms for power device design and new technology developments as well as building a world-class team who are also focused on GaN Devices.

Other responsibilities of the role include:
  • Implement DOE experimental design of power semiconductor devices, tape-out solution design and acceptance, including co-development with foundries, device testing and verification and other necessary new product verification links
  • Analyse and organize experimental data, and use innovative thinking to transform technology in R&D work into new products and intellectual property
  • Be responsible for technical support for external customers
  • Performing TCAD process and device simulations, and layout design
    • To be considered for this  GaN Device Development Director , the successful candidates will have a degree in microelectronics or electronics engineering with a proven background in Power IGBTs and other devices.

    If this  GaN Development Design Director  is of interest, then please apply with an up-to-date CV and contact information.
    Apply
    Location:
    Cambridge
    Job Type:
    FullTime

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